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15CT26A RFXF0007 NTE1846 MDW1043 2149F EL5308IS HMT325 16PT08H
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  Datasheet File OCR Text:
 Shantou Huashan Electronic Devices Co.,Ltd.
N P N S I L I C O N T RAN S I S T O R
HBD435
APPLICATIONS
Medium Power Linear And Switching Applicatione.
ABSOLUTE MAXIMUM RATINGSTa=25
Tstg----Storage Temperature.............................. -65~150 Tj----Junction Temperature.................................... 150 PC----Collector DissipationTc=25........................ 40W VCBO ----Collector-Base Voltage.............................. 32V VCES ----Collector-Emitter Voltage........................... 32V VEBO ----Emitter-Base Voltage.................................... 5V IC----Collector Current DC ....................................... 4A IC----Collector CurrentPulse....................................7A .............................................1A IB----Base Current DC
TO-220
1BaseB
2CollectorC 3Emitter, E
ELECTRICAL CHARACTERISTICSTa=25
Symbol Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current Emitter-Base Cutoff Current Collector Cutoff Current Min Typ Max Unit Test Conditions
BVCEO(SUS) ICBO IEBO ICES HFE1 *HFE2 *HFE3 *VCE(sat1) *VBE(on) fT
32 100 1 100 40 85 50 130 140 0.2 3 0.5 1.1
V A mA A
IC=100mA, IB=0 VCB=32V, IE=0 VEB=5V, IC=0 VCE=32V, VBE=0 VCE=5V, IC=10mA VCE=1V, IC=500mA VCE=1V, IC=2A
DC Current Gain
Collector- Emitter Saturation Voltage Base- Emitter On Voltage Current Gain-Bandwidth Product
V V MHz
IC=2A, IB=0.2A VCE=1V,IC=2A, Ic=250mA, VCE=1V
*Pulse Test: PW=300S,Duty Cycle=1.5% Pulsed
Shantou Huashan Electronic Devices Co.,Ltd.
N P N S I L I C O N T RAN S I S T O R
HBD435


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